Characterization of MOSFETs fabricated on large-grain polysilicon on insulator

Solid-State Electronics

Volumn 45, Issue 5, 2001, Pages 743-749

  Jagar, Singh ^a   Chan, Mansun ^a   Wang, Hongmei ^a   Poon, Vincent M C ^a   Myasnikov, A M ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

3 D VLSI; MILC; MIUC; SOI material and technology; Thin film transistor

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CRYSTALLIZATION; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY; STATISTICAL METHODS; THIN FILM TRANSISTORS; VLSI CIRCUITS;

LARGE-GRAIN POLYSILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 0035333264     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00031-4     Document Type: Article

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