Dependence of Power and Efficiency of AlGaN/GaN HEMT's on the Load Resistance for Class B Bias

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 118-125

  Kaper, V ^a   Tilak, V ^a   Green, B ^a,b   Prunty, T ^a   Smart, J ^a,c   Eastman, L F ^a   Shealy, J R ^a  

^a Department of Obstetrics Gynecology   (United States)

^b MOTOROLA INC   (United States)

^c RF MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRIC LOADS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

MICROWAVE FREQUENCIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242365563     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. L.F.Eastman, V.Tilak, J.Smart, B.M.Green, E.M. Chumbes, R.Dimitrov, Hyungtak Kim, O.Ambacher, N.Weimann, T. Prunty, M.Murphy, W.J. Schaff, J.R. Shealy, "Undoped AlGaN/GaN HEMTs for Microwave Power Amplification," IEEE Transactions on Electron Devices, March 2001.
2. V.Tilak, B.Green, V.Kaper, H.Kim, T.Prunty, J.Smart, J.R.Shealy, L.F Eastman, "Influence of Barrier Thickness on the High-Power Performance of AlGaN/GaN HEMTs," IEEE Elecctron Device Letters, Vol. 22, No. 11, November 2001.
3. Y.-F.Wu, P.M.Chavarkar, M.Moore, P.Parikh, U.K.Mishra, "Bias- dependent performance of high-power AlGaN/GaN HEMTs," IEDM Technical Digest, 2001.
4. S. Nuttinck, E. Gebara, J. Laskar, M. Harris, "Development of GaN Wide Bandgap Technology for Microwave Power Applications," IEEE Microwave Magazine, Vol.3, Issue 1, March 2002.
5. B.M.Green, V.Tilak, V.Kaper, J.R.Shealy, L.F.Eastman, "Dynamic Loadline Analysis of AlGaN/GaN HEMT's," submitted for publication at 2002 IEEE Lester Eastman Conference on High Performance Devices.