Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT

61st ARFTG Conference Digest Spring 2003: Measurement Accuracy, ARFTG Spring 2003

Volumn , Issue , 2003, Pages 97-102

  Kaper, V ^a   Tilak, V ^a   Green, B ^a   Thompson, R ^a   Prunty, T ^a   Eastman, L F ^a   Shealy, J R ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CAPACITANCE; GALLIUM NITRIDE; III-V SEMICONDUCTORS;

ALGAN/GAN HEMTS; DEVICE PARAMETERS; INPUT AND OUTPUTS; MICROWAVE PERFORMANCE; NONLINEAR CAPACITANCE; NONLINEAR OPERATION; TIME DOMAIN CHARACTERIZATIONS; TIME-DOMAIN WAVEFORMS;

TIME DOMAIN ANALYSIS;

EID: 84954305022     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ARFTGS.2003.1216872     Document Type: Conference Paper

References (7)

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2. J.R.Shealy, V.Kaper, V.Tilak, T.Prunty, J.A.Smart, B.Green, L.F.Eastman, "An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer," Journal of Physics: Condensed Matter, Volume 14, pp.3499-3509, April 2002.
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5. V.Kaper, V.Tilak, B.Green, T.Prunty, J.Smart, L.F.Eastman, J.R.Shealy, "Dependence of Power and Efficiency of AlGaN/GaN HEMT's on the Load Resistance for Class B Bias," 2002 Lester Eastman Conference on High Performance Devices Proceedings.
6. B.M.Green, K.K.Chu, E.M.Chumbes, J.A.Smart, J.R. Shealy, and L.F.Eastman, "The Effect of Surface Passivation on the Microwave Characteristics of Undoped AlGaN/GaN HEMT's," IEEE Electron Device Letters, Vol.21, no.6, June 2000.
7. V.Tilak, B.Green, V.Kaper, H.Kim, T.Prunty, J.Smart, J.Shealy, and L.Eastman, "Influence of Barrier Thickness on the High-Power Performance of AlGaN/GaN HEMTs," IEEE Electron Device Letters, Vol. 22, no. 11, November 2001.