Study of the conversion of the VO to the VO 2 defect in silicon heat-treated under uniform stress conditions

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1198-1203

  Londos, C A ^a   Antonova, I V ^b   Potsidou, M ^a   Misiuk, A ^c   Bak Misiuk, J ^c   Gutacovskii, A K ^d  

^a UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c Research Group of Integrated Circuits and System Design   (Poland)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING BEHAVIOR; ANNEALING PROCESS; HT-HP TREATMENT; INFRARED SPECTRUM; IRRADIATED MATERIALS; OXYGEN PRECIPITATES; REACTION PROCESS; REACTION SCHEMES; SELECTIVE ETCHING; STRUCTURAL DEFECT; UNIFORM STRESS; VIBRATION MODES;

ANNEALING; NEUTRON IRRADIATION; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

DEFECTS;

EID: 0036469570     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430529     Document Type: Article

References (20)

1. J. W. Corbett, G. D. Watkins, and R. S. Mc Doland, Phys. Rev. 135, A1381 (1964). pva PRVAAH 0096-8250
2. J. Lindstrom and B. Svenson, Mater. Res. Soc. Symp. Proc. 59, 45 (1986). mrs MRSPDH 0272-9172
3. C. A. Londos, N. V. Sarlis, and L. G. Fytros, J. Appl. Phys. 84, 3569 (1998). jap JAPIAU 0021-8979
4. B. Pajiot, Semicond. Semimetals 42, 191 (1994). ssm SESEES 0080-8784
5. H. J. Stein, Appl. Phys. Lett. 48, 1540 (1986). apl APPLAB 0003-6951
6. R. C. Newman, J. Phys.: Condens. Matter 12, R335 (2000). jcz JCOMEL 0953-8984
7. R. C. Newman, Semicond. Semimetals 42, 289 (1994). ssm SESEES 0080-8784
8. H. Bender and J. Vanhellemont, in Handbook in Semiconductors, edited by S. Mahayan (1994), Vol. 3b, p. 1637.
9. A. Borghesi, B. Pivac, A. Sassella, and A. Stella, J. Appl. Phys. 77, 4169 (1995). jap JAPIAU 0021-8979
10. K. Schmalz, K. Tittelbach, V. V. Emtsev, and Yu. N. Duluda, Phys. Status Solidi A 116, K37 (1989). psa PSSABA 0031-8965
11. U. Gosele, Mater. Res. Soc. Symp. Proc. 59, 419 (1986). mrs MRSPDH 0272-9172
12. R. C. Newman, Mater. Res. Soc. Symp. Proc. 104, 25 (1988). mrs MRSPDH 0272-9172
13. J. Jung and M. Lefeld-Sosnowska, Philos. Mag. 50, 233 (1984). phm PHMAA4 0031-8086
14. A. Misiuk, Phys. Status Solidi A 171, 191 (1999). psa PSSABA 0031-8965
15. I. V. Antonova, A. Misiuk, V. P. Popov, A. E. Plotnikov, and B. Surma, Physica B 253, 131 (1998). phb PHYBE3 0921-4526
16. F. A. Pouce and S. Hahn, Mater. Sci. Eng., B 4, 11 (1989). msb MSBTEK 0921-5107
17. A. Bourret, J. Thisbault-Desseaux, and D. N. Seidman, J. Appl. Phys. 55, 825 (1984). jap JAPIAU 0021-8979
18. K. Sawada, T. Karaki, and J. Watanabe, J. Appl. Phys. 53, 6983 (1982). jap JAPIAU 0021-8979
19. H. Bender, Phys. Status Solidi A 86, 245 (1984). psa PSSABA 0031-8965
20. J. W. Corbett, J. C. Bourgoin, L. J. Cheng, J. C. Corelli, Y. H. Moonney, and C. Weigel, Rad. Eff. Semicond., Conf.Ser. N31, 1 (1976).