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Volumn 91, Issue 3, 2002, Pages 1198-1203
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Study of the conversion of the VO to the VO 2 defect in silicon heat-treated under uniform stress conditions
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING BEHAVIOR;
ANNEALING PROCESS;
HT-HP TREATMENT;
INFRARED SPECTRUM;
IRRADIATED MATERIALS;
OXYGEN PRECIPITATES;
REACTION PROCESS;
REACTION SCHEMES;
SELECTIVE ETCHING;
STRUCTURAL DEFECT;
UNIFORM STRESS;
VIBRATION MODES;
ANNEALING;
NEUTRON IRRADIATION;
SILICON;
TRANSMISSION ELECTRON MICROSCOPY;
DEFECTS;
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EID: 0036469570
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1430529 Document Type: Article |
Times cited : (13)
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References (20)
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