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Volumn 91, Issue 3, 2002, Pages 1198-1203

Study of the conversion of the VO to the VO 2 defect in silicon heat-treated under uniform stress conditions

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING BEHAVIOR; ANNEALING PROCESS; HT-HP TREATMENT; INFRARED SPECTRUM; IRRADIATED MATERIALS; OXYGEN PRECIPITATES; REACTION PROCESS; REACTION SCHEMES; SELECTIVE ETCHING; STRUCTURAL DEFECT; UNIFORM STRESS; VIBRATION MODES;

EID: 0036469570     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430529     Document Type: Article
Times cited : (13)

References (20)
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    • 0009993746 scopus 로고
    • ssm SESEES 0080-8784
    • B. Pajiot, Semicond. Semimetals 42, 191 (1994). ssm SESEES 0080-8784
    • (1994) Semicond. Semimetals , vol.42 , pp. 191
    • Pajiot, B.1
  • 5
    • 0345383223 scopus 로고
    • apl APPLAB 0003-6951
    • H. J. Stein, Appl. Phys. Lett. 48, 1540 (1986). apl APPLAB 0003-6951
    • (1986) Appl. Phys. Lett. , vol.48 , pp. 1540
    • Stein, H.J.1
  • 14
    • 0032738729 scopus 로고    scopus 로고
    • psa PSSABA 0031-8965
    • A. Misiuk, Phys. Status Solidi A 171, 191 (1999). psa PSSABA 0031-8965
    • (1999) Phys. Status Solidi A , vol.171 , pp. 191
    • Misiuk, A.1
  • 19


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.