Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure

Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 4-6, 2001, Pages 223-225

  Emtsev Jr , V V ^a   Ammerlaan, C A J ^a   Andreev, B A ^b   Emtsev, V V ^c   Oganesyan, G A ^c   Misiuk, A ^d   Londos, C A ^e  

^a UNIVERSITY OF AMSTERDAM   (Netherlands)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^e UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; DIFFUSION; ELECTRIC VARIABLES MEASUREMENT; HYDROSTATIC PRESSURE; OPTICAL VARIABLES MEASUREMENT; OXYGEN; STRESS ANALYSIS;

CZOCHRALSKI GROWN SILICON; OXYGEN AGGREGATION; THERMAL DONORS;

SEMICONDUCTING SILICON;

EID: 0035299947     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1011251101905     Document Type: Article

References (12)