Ta-Si-N as a diffusion barrier between Cu and Si

Materials Chemistry and Physics

Volumn 57, Issue 1, 1998, Pages 17-22

  Lee, Chongmu ^a   Shin, Young Hoon ^a  

^a Inha University   (South Korea)

Author keywords

Crystallization temperature; Diffusion barrier; Failure temperature; Ta Si N

Indexed keywords

COPPER; INTERDIFFUSION (SOLIDS); SILICON NITRIDE; SPUTTER DEPOSITION; THALLIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIERS;

THIN FILMS;

EID: 0032208223     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(98)00176-X     Document Type: Article

References (4)

1. J.P. Pan, C.H. Ting, Selective electroless copper for VLSI inter connection, IEEE Electron Device Lett. 10 (1988) 423.
2. M. Wittmer, Barrier layers: principles and applications in microelectronics, J. Vac. Sci. Technol. A2 (1984) 273.
3. E. Kolawa, J.S. Chen, J.S. Reid, P.J. Pokela, M.A. Nicolet, Tantalnum-based diffusion barriers in Si/Cu VLSI metallization, J. Appl. Phys. 70 (1991) 1369-1373.
4. E. Kolawa, P.J. Pokela, J.S. Reid, J.S. Chen, R.P. Ruiz, M.A. Nicolet, Sputtered Ta-Si-N diffusion barriers in Cu metallization for Si, IEEE Electron Device Lett. 12 (1991) 321-323.