Evaluation of single- and multilayered amorphous tantalum nitride thin films as diffusion barriers in copper metallization

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 720-723

  Chen, G S ^a   Chen, S T ^a   Yang, L C ^b   Lee, P Y ^c  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b Huwei Institute of Technology   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTALLIZATION; DEGRADATION; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; METALLIZING; MULTILAYERS; NITRIDES; PRECIPITATION (CHEMICAL); SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS TANTALUM NITRIDE THIN FILMS; COPPER METALLIZATION; DIFFUSION BARRIERS;

AMORPHOUS FILMS;

EID: 0034155715     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582166     Document Type: Article

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