Correlation of pulsed IV measurements and high power performance of AlGaN/GaN HEMTs

Institute of Physics Conference Series

Volumn 174, Issue , 2003, Pages 287-290

  Tilak, V ^a,b   Kaper, V ^a   Thompson, R ^a   Prunty, T ^a   Kim, H ^a   Smart, J ^a   Shealy, J R ^a   Eastman, L ^a  

^a Department of Theoretical and Applied Mechanics and the Cornell Nanofabrication Facility   (United States)

^b GE GRC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; CURRENT DISPERSIONS; EPILAYERS; VOLTAGE PULSES;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; ENERGY GAP; ETCHING; GALLIUM NITRIDE; INDUCTANCE; MESFET DEVICES; MICROWAVES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 10444256485     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Shealy, J. R., Kaper, V., Tilak, V., Prunty, T., Smart, J. A., Green, B., and Eastman, L.F., J. Phys.: Condens. Matter, 14 (13), pp. 3499-3509, 2002.
2. Green, B.M., Chu, K.K., Chumbes, E.M., Smart, J.A., Shealy, J.R., Eastman, L.F., IEEE Elect. Dev. Lett. 21 (6), pp. 268-270, 2000.
3. Vetury,R., Zhang, N.Q., Keller, S., Mishra, U.K., IEEE Trans. Electron. Dev. 48 (3), pp. 560-566, 2001.
4. Binari, S. C., Ikossi-Anastasiou, K., Roussos, J. A., Park, D., Koleske, D. D., Wickenden, A. E., and Henry, R. L., Proc. Int. Conf. Nitride Semiconductors, pp. 476-478, 1997
5. Yeats, R., D'Avanzo, D. C., Chan, K., Fernandez, N., Taylor, T. W., and Vogel, C., IEDM Tech. Dig., pp. 842-845, 1988.
6. Lo, S-H., Lee, C-P., IEEE Trans. Elect. Dev., 41 (9), pp. 1504-1511, 1994.