High quality GaInNAs active layers for 1.3-μm lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4287, Issue , 2001, Pages 154-161

  Kitatani, T ^a   Kondow, M ^a   Tanaka, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

Characteristic temperature; GaInNAs; High temperature performance; Optical fiber communications

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CHARACTERISTIC TEMPERATURE; CRYSTAL QUALITY; HIGH TEMPERATURE PERFORMANCE;

SEMICONDUCTOR LASERS;

EID: 0034861307     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.429796     Document Type: Conference Paper

References (14)

1. A novel material of GaInNAs for long-wavelength-range laser diodes with excellent high-temperature performance
2. GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
3. Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition
4. GaInNAs/GaAs quantum well growth by chemical beam epitaxy
5. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelength in the range 1.28-1.38 μm
6. High power CW operation of InGaAsN lasers at 1.3 μm
7. High-temperature characteristics in 1.3-μm-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition
8. A 1.3-μm GaInNAs/GaAs single-quantum-well laser diode with high characteristic temperature over 200 K
9. A 1.3-μm GaInNAs-laser diode with a lifetime of over 1000 hours
10. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm
11. 3-flow-rate in GaInNAs grown by gas-source MBE using N-radicals as an N-source
12. Mechanism analysis of improved GaInNAs optical properties through thermal annealing
13. Thermal annealing of GaInNAs/GaAs quantum wells by chemical beam epitaxy and its effect on photoluminescence
14. 0) through thermal annealing of a 1.3-μm GaInNAs/GaAs single-quantum-well laser diode