Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits

Journal of Applied Physics

Volumn 94, Issue 11, 2003, Pages 7105-7111

  Umeda, T ^a,c   Mochizuki, Y ^a   Okonogi, K ^b   Hamada, K ^b  

^a NEC CORPORATION   (Japan)

^b Elpida Memory Inc   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SPIN RESONANCE SPECTROSCOPY; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; MAGNETIC RESONANCE; MOSFET DEVICES; POINT DEFECTS; RESIDUAL STRESSES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

MICROSCOPIC STRUCTURES; PHOTOEXCITATION;

INTEGRATED CIRCUITS;

EID: 0348157029     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1623608     Document Type: Article

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