Surface Treatment Effect on the Poly-Si TFTs Fabricated by Electric Field Enhanced Crystallization of Ni/a-Si:H Films

IEEE Electron Device Letters

Volumn 24, Issue 12, 2003, Pages 733-735

  Kim, Binn ^a   Kim, Hae Yeol ^a   Seo, Hyun Sik ^a   Kim, Sung Ki ^a   Kim, Chang Dong ^a  

^a LG Display Co Ltd   (South Korea)

Author keywords

H2O:HF:H2O2 solution; Leakage current; Nickel; Poly Si; Surface treatment

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ENERGY DISPERSIVE SPECTROSCOPY; FLUORESCENCE; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; SURFACE TREATMENT; THRESHOLD VOLTAGE;

DRAIN VOLTAGE; METAL INDUCED CRYSTALLIZATION (MIC);

THIN FILM TRANSISTORS;

EID: 0347761548     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.820626     Document Type: Article

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