Acid etching chemistry characterizes silicon wafer surface metals

Semiconductor International

Volumn 22, Issue 8, 1999, Pages

  Meyer, Fred ^a,b,c   White, John B ^a,c,d  

^a Silicon Eng Technol Ctr Lab   (United States)

^b UNIVERSITY OF NORTH TEXAS   (United States)

^c MEMC Southwest ^*  (United States)

^d UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACID ETCHING;

COMPOSITION; ETCHING; IMPURITIES;

SILICON WAFERS;

EID: 6544276465     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. F. Meyer, J. White, M Radle, Silicon Wafer Surface Metals Characterization Using Automatic Wafer Scanning and Inductively Coupled Plasma Mass Spectrometry, Submitted to Semiconductor International, September 1998.
2. D. R. Turner (Bell Telephone Laboratories), On the Mechanism of Chemically Etching Germanium and Silicon, JECS, 1960.
3. B. Tuck, Review: The Chemical Polishing of Semiconductors, Journal of Material Science, 10, 1975.
4. S. Dhanda, P. Gupta, B. B. Triplett, C. R Helms, Optimization of Pre-Gate Cleaning Sequences & Fluid Purity, SRC Contract 350 Final Report, Part 2, January 1997.
5. S. Dhanda, et al.
6. W. Kern, D. A. Puotinen, Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology, RCA Review, June 1970.
7. B Tuck
8. F. Meyer, J. White, M. Radle
9. C.R. Helms and Heungsoo Park, Proceedings of the 3rd International Symposium on Cleaning Technology, The Electrochemical Society, 1993.
10. S. Dhanda, et al.
11. F Meyer, J. White, M. Radle