Growth modes in homoepitaxy on vicinal GaAs(110) surfaces

Surface Science

Volumn 424, Issue 2, 1999, Pages

  Tejedor, P ^a,b   Smilauer P ^a,c   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^c INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SINGLE CRYSTALS; SURFACE ROUGHNESS;

ADATOMS; HOMOEPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032671539     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00093-X     Document Type: Article

References (13)

1. Gaines J.M., Petroff P.M., Kroemer H., Simes R.J., Geels R.S., English J.H. Vac. Sci. Technol. B. 6:1988;1378.
2. Fukui T., Saito H. Appl. Phys. Lett. 50:1987;824.
3. Tejedor P., Allegretti F.E., Šmilauer P., Joyce B.A. Surf. Sci. 407:1998;82.
4. Bales G.S., Zangwill A. Phys. Rev. B. 41:1990;5500.
5. Rost M., Šmilauer P., Krug J. Surf. Sci. 369:1996;393.
6. Tejedor P., Šmilauer P., Roberts C., Joyce B.A. Phys. Rev. B. 59:1999;2341.
7. Holmes D.M., Tok E.S., Sudijono J.L., Jones T.S., Joyce B.A. J. Cryst. Growth. 192:1998;33.
8. Tok E.S., Neave J.H., Allegretti F.E., Zhang J., Jones T.S., Joyce B.A. Surf. Sci. 371:1997;277.
9. Schwoebel R.L., Shipsey E.J. J. Appl. Phys. 37:1966;3682.
10. Ehrlich G., Hudda F.G. J. Chem. Phys. 44:1966;1039.
11. Tok E.S., Neave J.H., Zhang J., Jones T.S., Joyce B.A. Surf. Sci. 374:1997;397.
12. Zhang X.M., Pashley D.W., Kamiya I., Neave J.H., Joyce B.A. J. Cryst. Growth. 147:1995;234.
13. McCoy J.M., LaFemina J.P. Phys. Rev. B. 54:1996;14511.