Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 197-201

  Jiang, Weihong ^a   Xu, Huaizhe ^a   Xu, Bo ^a   Zhou, Wei ^a   Gong, Qian ^a   Ding, Ding ^a   Liang, Jiben ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

POSITIONAL DISTRIBUTIONS; SURFACE OXIDES;

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035087933     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1333081     Document Type: Article

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