Ga-induced restructuring of Si(112) and Si(337)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 992-994

  Baski, A A ^a   Whitman, L J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002439846     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589191     Document Type: Article

References (13)

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3. L. Fotiadis and R. Kaplan, Thin Solid Films 184, 415 (1990).
4. A. A. Baski and L. J. Whitman, Phys. Rev. Lett. 74, 956 (1995).
5. A. A. Baski, S. C. Erwin, and L. J. Whitman, Science 269, 1556 (1995).
6. S. Song, M. Yoon, and S. G. J. Mochrie, Surf. Sci. 334, 153 (1995).
7. T. M. Jung, S. M. Prokes, and R. Kaplan, J. Vac. Sci. Technol. A 12, 1838 (1994).
8. T. M. Jung, R. Kaplan, and S. M. Prokes, Surf. Sci. 289, L577 (1993).
9. The (337)-like planes arise from an effort by the surface to form the stable (5 5 12) plane [0.7° from (337)]; however, the nanofacets are too narrow to form multiple unit-cell-wide (5 5 12) terraces. Whereas each unit cell of (5 5 12) is composed of two unit cells of (337) and one of (225), a nanoterrace may consist of four units of (337) and only one of (225). A general shortage of (225) units gives the nanoterraces their (337)-like character.
10. A. A. Baski, S. C. Erwin, and L. J. Whitman (to be published).
11. Corrugations up to 300 A wide are occasionally present on the surface, but they are most likely caused by the small misorientation of the Si wafer toward [110].
12. L. Li, Y. Wei, and I. S. T. Tsong, J. Vac. Sci. Technol. A 13, 1473 (1995).
13. E. D. Williams and N. C. Bartelt, Science 251, 393 (1991).