Low-index facet formation in InGaAs islands on GaAs (n11)B substrates

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 586-591

  Lee, Jeong Sik ^a   Nishi, Kenichi ^a   Masumoto, Yasuaki ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; HETEROJUNCTIONS; INTERFACIAL ENERGY; LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

LOW INDEX FACET;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034506020     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00783-1     Document Type: Article

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