Effects of quantization on random telegraph signals observed in deep-submicron MOSFETs

Microelectronics Reliability

Volumn 40, Issue 11, 2000, Pages 1823-1831

  Çelik Butler, Zeynep ^a   Wang, Fang ^a  

^a Southern Methodist University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTATIONAL METHODS; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; SUBSTRATES;

MEDIUM-DOPED DRAIN (MDD); SURFACE QUANTIZATION EFFECTS;

MICROELECTRONICS;

EID: 0034325333     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00083-4     Document Type: Article

References (12)

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