Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 685-688

  Stolwijk, N A ^a   Bosker G ^a   Thordson, J V ^b   Sodervall U ^b   Andersson, T G ^b   Jager Ch ^c   Jager W ^c  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF KIEL   (Germany)

Author keywords

Diffusion; GaAs; Interstitials; Nitrogen

Indexed keywords

ANNEALING; ARSENIC; CARRIER MOBILITY; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUBSTRATES;

INTERSTITIALS; SELF-DIFFUSION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033418117     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00610-9     Document Type: Article

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