Study of As self-diffusion in GaAs using sulfur as a tracer

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 742-744

  Engler, N ^a   Leipner, H S ^b   Scholz, R F ^a,c   Werner, P ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c Fractal AG   (Germany)

Author keywords

As self diffusion; GaAs; Sulfur diffusion

Indexed keywords

ARSENIC; COMPUTER SIMULATION; DIFFUSION; POINT DEFECTS; SOLUBILITY; SULFUR; TRACE ANALYSIS;

SELF-DIFFUSION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035672998     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00798-0     Document Type: Article

References (9)