SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 165-170

Microstructural characterization of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy

(8) Kim, Hyonju a Andersson, T G a Sodervall U a Jager C a Jager W a Albrecht, M a Bosker G a Stolwijk, N A a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BINARY ALLOYS; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NITROGEN; PHASE TRANSITIONS; PLASMA APPLICATIONS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

COLUMNAR GROWTH; GALLIUM ARSENIDE; RF PLASMA ASSISTED MOLECULAR BEAM EPITAXY; WURZITE PHASE;

GALLIUM ALLOYS;

EID: 0036375573 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (2)

References (13)

1
- 0031153819
- (1997) IEEE J. Selected Topics in Quantum Electronics , vol.3 , pp. 719
- Kondow, M.¹ Kitatani, T.² Nakatsuka, S.³ Larson, M.C.⁴ Nakahara, K.⁵ Yazawa, Y.⁶ Okai, M.⁷

2
- 5944258911
- (1996) Phys. Rev. Lett. , vol.76 , pp. 664
- Wei, S.-H.¹ Zunger, A.²

3
- 0040568800
- (1998) Phys. Rev. Lett. , vol.81 , pp. 3443
- Bösker, G.¹ Stolwijk, N.A.² Thordson, J.V.³ Södervall, U.⁴ Andersson, T.G.⁵

4
- 0033418117
- (1999) Physica B , vol.273 , pp. 685
- Stolwijk, N.A.¹ Bösker, G.² Thordson, J.V.³ Södervall, U.⁴ Andersson, T.G.⁵ Jäger, C.⁶ Jäger, W.⁷

5
- 85010816076
- (1997) MIJ-NSR , vol.2
- Thordson, J.V.¹ Zsebok, O.² Södervall, U.³ Andersson, T.G.⁴

6
- 0031077166
- (1997) J. Crystal Growth , vol.171 , pp. 321
- Xin, Y.¹ Browna, P.D.² Dunin-Borkowskia, R.E.³ Humphreysa, C.J.⁴ Chengb, T.S.⁵ Foxon, C.T.⁶

7
- 0034325366
- (2000) J. Crystal Growth , vol.219 , pp. 327
- Foxon, C.T.¹ Novikov, S.V.² Cheng, T.S.³ Davis, C.S.⁴ Campion, R.P.⁵ Winser, A.J.⁶ Harrison, I.⁷

8
- 0035399206
- (2001) J. Crystal Growth , vol.227 , pp. 486
- Foxon, C.T.¹ Novikov, S.V.² Campion, R.P.³ Davis, C.S.⁴ Cheng, T.S.⁵ Winser, A.J.⁶ Harrison, I.⁷

9
- 0000460218
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1025
- Feuillet, G.¹ Hamaguchi, H.² Ohta, K.³ Hacke, P.⁴ Okumura, H.⁵ Yoshida, S.⁶

10
- 0000528915
- (1998) Appl. Phys. Lett. , vol.72 , pp. 3056
- Okumura, H.¹ Hamaguchi, H.² Feuillet, G.³ Ishida, Y.⁴ Yoshida, S.⁵

11
- 0000001703
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 1297
- Zhao, Y.¹ Deng, F.² Lau, S.S.³ Tu, C.W.⁴

12
- 85010744759
- (2000) MIJ-NSR , vol.5S1
- Yoshida, S.¹ Kimura, T.² Wu, J.³ Kikawa, J.⁴ Onabe, K.⁵ Shiraki, Y.⁶

13
- 0010352791
- (1996) Semiconductors , vol.30 , pp. 164
- Cheng, T.S.¹ Jenkins, L.C.² Hooper, S.E.³ Foxon, C.T.⁴ Ber, B.Y.⁵ Merkulov, A.V.⁶ Novikov, S.V.⁷ Tret'yakov, V.V.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.