Current noise at the oxide hard-breakdown

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 43-47

  Crupi, F ^a   Ciofi, C ^a   Iannaccone, G ^b   Neri, B ^b   Lombardo, S ^c  

^a INFM   (Italy)

^b UNIVERSITY OF PISA   (Italy)

^c CNR IMETEM   (Italy)

Author keywords

1 f noise; Oxide breakdown; Quantum point contact; RTS noise

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRON TRAPS; GATES (TRANSISTOR); SPECTRUM ANALYSIS; THERMAL EFFECTS;

OXIDE HARD-BREAKDOWNS (HBD); QUANTUM POINT CONTACTS;

MOS DEVICES;

EID: 0035498567     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00639-6     Document Type: Conference Paper

References (8)

1. Point contact conduction at the oxide breakdown of MOS devices
2. Soft breakdown of ultra-thin gate oxide layers
3. 2-Si capacitors: Dependence on oxide thickness
4. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise
5. Shot noise partial suppression in the SILC regime
6. Gate oxide breakdown under current limited constant voltage stress
7. Composition of 1/f noise in metal-insulator-metal tunnel junctions