-
1
-
-
0347702859
-
Future optical storage in multimedia environment and role of blue lasers
-
Tokushima, M1-1
-
Yamada H. Future optical storage in multimedia environment and role of blue lasers. Proc 2nd Int Conf on Nitride Semiconductors, Tokushima, M1-1, p 2-4, 1997.
-
(1997)
Proc 2nd int Conf on Nitride Semiconductors
, pp. 2-4
-
-
Yamada, H.1
-
2
-
-
0347702860
-
Retrospect and prospect of nitride research in Japan
-
Nagoya
-
Akasaki I. Retrospect and prospect of nitride research in Japan. Proc Topical Workshop on III-V Nitrides, Nagoya, p 1-3, 1995.
-
(1995)
Proc Topical Workshop on III-V Nitrides
, pp. 1-3
-
-
Akasaki, I.1
-
3
-
-
84883188181
-
P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)
-
Amano H, Kito M, Hiramatsu K, Akasaki I. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn J Appl Phys 1989;28:L2112-L2114.
-
(1989)
Jpn J Appl Phys
, vol.28
-
-
Amano, H.1
Kito, M.2
Hiramatsu, K.3
Akasaki, I.4
-
5
-
-
0020194066
-
Properties of AlGaN films prepared by reactive molecular beam epitaxy
-
Yoshida S, Misawa S, Gonda G. Properties of AlGaN films prepared by reactive molecular beam epitaxy. J Appl Phys 1982;53:6844-6848.
-
(1982)
J Appl Phys
, vol.53
, pp. 6844-6848
-
-
Yoshida, S.1
Misawa, S.2
Gonda, G.3
-
6
-
-
36549091170
-
Energy band-gap bowing parameter in an AlGaN alloy
-
Koide Y, Itoh H, Khan MRH, Hiramatsu K, Sawaki S, Akasaki I. Energy band-gap bowing parameter in an AlGaN alloy. J Appl Phys 1987;61:4540-4543.
-
(1987)
J Appl Phys
, vol.61
, pp. 4540-4543
-
-
Koide, Y.1
Itoh, H.2
Khan, M.R.H.3
Hiramatsu, K.4
Sawaki, S.5
Akasaki, I.6
-
7
-
-
0000630388
-
High quality self-nucleated AlGaN layers on (0001) sapphire by low-pressure metalorganic chemical vapor deposition
-
Wickenden DK, Bargeron CB, Bryden WA, Miragliova J, Kistenmacher TJ. High quality self-nucleated AlGaN layers on (0001) sapphire by low-pressure metalorganic chemical vapor deposition. Appl Phys Lett 1994;65:2024-2026.
-
(1994)
Appl Phys Lett
, vol.65
, pp. 2024-2026
-
-
Wickenden, D.K.1
Bargeron, C.B.2
Bryden, W.A.3
Miragliova, J.4
Kistenmacher, T.J.5
-
8
-
-
0031072477
-
Optical properties of strained AlGaN and GaInN on GaN
-
Takeuchi T, Takeuchi H, Sota S, Sakai H, Amano H, Akasaki I. Optical properties of strained AlGaN and GaInN on GaN. Jpn J Appl Phys 1997;36(Part 2):L177-L179.
-
(1997)
Jpn J Appl Phys
, vol.36
, Issue.2 PART
-
-
Takeuchi, T.1
Takeuchi, H.2
Sota, S.3
Sakai, H.4
Amano, H.5
Akasaki, I.6
-
9
-
-
0016544942
-
Preparation and properties of GaInN thin films
-
Osamura K, Naka S, Murakami Y. Preparation and properties of GaInN thin films. J Appl Phys 1975;46:3433-3437.
-
(1975)
J Appl Phys
, vol.46
, pp. 3433-3437
-
-
Osamura, K.1
Naka, S.2
Murakami, Y.3
-
10
-
-
0031122223
-
III-V nitride based light-emitting devices
-
Nakamura S. III-V nitride based light-emitting devices. Solid State Commun 1997;102:237-248.
-
(1997)
Solid State Commun
, vol.102
, pp. 237-248
-
-
Nakamura, S.1
-
11
-
-
0001401146
-
Large band gap bowing of InGaN alloys
-
McCluskey MD, Van de Walle CG, Master CP, Romano LT, Johnson NM. Large band gap bowing of InGaN alloys. Appl Phys Lett 1998;72:2725-2726.
-
(1998)
Appl Phys Lett
, vol.72
, pp. 2725-2726
-
-
McCluskey, M.D.1
Van De Walle, C.G.2
Master, C.P.3
Romano, L.T.4
Johnson, N.M.5
-
12
-
-
0028731085
-
Acceptor binding energy and band lineup of III-V nitride alloys and MOCVD growth of GaN on GaAs- Or GaP coated Si
-
Ueta Y, Sakai S, Kamiya Y. Acceptor binding energy and band lineup of III-V nitride alloys and MOCVD growth of GaN on GaAs- or GaP coated Si. Proc Material Research Society 1994;339:459-463.
-
(1994)
Proc Material Research Society
, vol.339
, pp. 459-463
-
-
Ueta, Y.1
Sakai, S.2
Kamiya, Y.3
-
13
-
-
38249038759
-
Modeling of band discontinuity using modified Harrison model
-
Gonda S. Modeling of band discontinuity using modified Harrison model. Solid State Commun 1986;60:249-251.
-
(1986)
Solid State Commun
, vol.60
, pp. 249-251
-
-
Gonda, S.1
-
14
-
-
0030127795
-
Valence-band discontinuity of wurtzite GaN, AlN and InN heterojunctions measured by x-ray photoemission spectroscopy
-
Martin G, Botchkarev A, Rockett A, Morkoc H. Valence-band discontinuity of wurtzite GaN, AlN and InN heterojunctions measured by x-ray photoemission spectroscopy. Appl Phys Lett 1996;68:2541-2543.
-
(1996)
Appl Phys Lett
, vol.68
, pp. 2541-2543
-
-
Martin, G.1
Botchkarev, A.2
Rockett, A.3
Morkoc, H.4
-
15
-
-
22244476386
-
Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
-
Keller S, Keller BP, Wu YF, Heying B, Kapolnek D, Speck JS, Mishra UK, DenBaars SP. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition. Appl Phys Lett 1996;68:1525-1527.
-
(1996)
Appl Phys Lett
, vol.68
, pp. 1525-1527
-
-
Keller, S.1
Keller, B.P.2
Wu, Y.F.3
Heying, B.4
Kapolnek, D.5
Speck, J.S.6
Mishra, U.K.7
DenBaars, S.P.8
-
17
-
-
0002835692
-
Defect and interfaces in GaN epitaxy
-
Ponce FA. Defect and interfaces in GaN epitaxy. MRS Bull 1997;22:51-57.
-
(1997)
MRS Bull
, vol.22
, pp. 51-57
-
-
Ponce, F.A.1
-
18
-
-
0001590704
-
Growth and characterization of bulk InGaN films and quantum wells
-
Keller S, Keller BP, Kapolnek D, Abare AC, Masui H, Coldren LA, Mishra UK, DenBaars SP. Growth and characterization of bulk InGaN films and quantum wells. Appl Phys Lett 1996;68:3147-3149.
-
(1996)
Appl Phys Lett
, vol.68
, pp. 3147-3149
-
-
Keller, S.1
Keller, B.P.2
Kapolnek, D.3
Abare, A.C.4
Masui, H.5
Coldren, L.A.6
Mishra, U.K.7
DenBaars, S.P.8
-
19
-
-
0031150309
-
Thermodynamical properties of III-V nitrides and crystal growth of GaN at high N2 pressure
-
Porowski S, Grzegory I. Thermodynamical properties of III-V nitrides and crystal growth of GaN at high N2 pressure. J Crystal Growth 1997;178:174-188.
-
(1997)
J Crystal Growth
, vol.178
, pp. 174-188
-
-
Porowski, S.1
Grzegory, I.2
-
20
-
-
0031073857
-
Nucleation control in the growth of bulk GaN by sublimation method
-
Kurai S, Nishino K, Sakai S. Nucleation control in the growth of bulk GaN by sublimation method. Jpn J Appl Phys 1997;36:L184-L186.
-
(1997)
Jpn J Appl Phys
, vol.36
-
-
Kurai, S.1
Nishino, K.2
Sakai, S.3
-
21
-
-
0345810890
-
Growth of bulk GaN and device response: A survey
-
in Japanese
-
Sakai, S. Growth of bulk GaN and device response: A survey. Appl Phys 1998;67:1276-1280. (in Japanese)
-
(1998)
Appl Phys
, vol.67
, pp. 1276-1280
-
-
Sakai, S.1
-
22
-
-
0031998287
-
Surface pre-treatment study of a bulk GaN for homo-epitaxial growth by metalorganic chemical vapor deposition
-
Sato H, Sugahara T, Hao M, Naoi Y, Kurai S, Yamashita K, Nishino K, Sakai S. Surface pre-treatment study of a bulk GaN for homo-epitaxial growth by metalorganic chemical vapor deposition. Jpn J Appl Phys 1998;37:626-631.
-
(1998)
Jpn J Appl Phys
, vol.37
, pp. 626-631
-
-
Sato, H.1
Sugahara, T.2
Hao, M.3
Naoi, Y.4
Kurai, S.5
Yamashita, K.6
Nishino, K.7
Sakai, S.8
-
23
-
-
85042807979
-
Direct evidence that dislocation are non-radiative recombination centers in GaN
-
Sugahara T, Sato H, Hao MS, Naoi Y, Kurai S, Tottori S, Yamashita K, Nishino K, Romano LT, Sakai S. Direct evidence that dislocation are non-radiative recombination centers in GaN. Jpn J Appl Phys 1998;37(Part 2):L398-L400.
-
(1998)
Jpn J Appl Phys
, vol.37
, Issue.2 PART
-
-
Sugahara, T.1
Sato, H.2
Hao, M.S.3
Naoi, Y.4
Kurai, S.5
Tottori, S.6
Yamashita, K.7
Nishino, K.8
Romano, L.T.9
Sakai, S.10
-
24
-
-
0031187047
-
Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy
-
Usui A, Sunakawa H, Sakai A, Yamaguchi AA. Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy. Jpn J Appl Phys 1997;36(Part 2):L899-L902.
-
(1997)
Jpn J Appl Phys
, vol.36
, Issue.2 PART
-
-
Usui, A.1
Sunakawa, H.2
Sakai, A.3
Yamaguchi, A.A.4
-
25
-
-
0347072312
-
Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs-coated silicon by molecular beam epitaxy
-
Sakai S, Matyi RJ, Schichijo H. Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs-coated silicon by molecular beam epitaxy. Appl Phys Lett 1987;51:1913-1915.
-
(1987)
Appl Phys Lett
, vol.51
, pp. 1913-1915
-
-
Sakai, S.1
Matyi, R.J.2
Schichijo, H.3
-
26
-
-
0024629562
-
Epitaxial lateral overgrowth of GaAs on Si substrate
-
Ujiie Y, Nishinaga T. Epitaxial lateral overgrowth of GaAs on Si substrate. Jpn J Appl Phys 1989;28: L337-L339.
-
(1989)
Jpn J Appl Phys
, vol.28
-
-
Ujiie, Y.1
Nishinaga, T.2
-
27
-
-
0032089984
-
Time-resolved electroluminescence spectroscopy of InGaN single quantum well LEDs
-
Narukawa Y, Saijyo S, Kawakami Y, Fujita S, Fujita S, Nakamura S. Time-resolved electroluminescence spectroscopy of InGaN single quantum well LEDs. J Crystal Growth 1998;189/190:593-596.
-
(1998)
J Crystal Growth
, vol.189-190
, pp. 593-596
-
-
Narukawa, Y.1
Saijyo, S.2
Kawakami, Y.3
Fujita, S.4
Fujita, S.5
Nakamura, S.6
-
28
-
-
0032047588
-
Compositional inhomogeneity of InGaN grown on sapphire and bulk substrates by metalorganic chemical vapor deposition
-
Sato H, Sugahara T, Naoi Y, Sakai S. Compositional inhomogeneity of InGaN grown on sapphire and bulk substrates by metalorganic chemical vapor deposition. Jpn J Appl Phys 1998;37:2013-2015.
-
(1998)
Jpn J Appl Phys
, vol.37
, pp. 2013-2015
-
-
Sato, H.1
Sugahara, T.2
Naoi, Y.3
Sakai, S.4
-
29
-
-
0032181735
-
Role of dislocation in InGaN phase separation
-
Sugahara T, Hao M, Wang T, Nakagawa D, Naoi Y, Nishino K, Sakai S. Role of dislocation in InGaN phase separation. Jpn J Appl Phys 1998;37(Part 2):L1195-L1198.
-
(1998)
Jpn J Appl Phys
, vol.37
, Issue.2 PART
-
-
Sugahara, T.1
Hao, M.2
Wang, T.3
Nakagawa, D.4
Naoi, Y.5
Nishino, K.6
Sakai, S.7
-
30
-
-
85042807979
-
Direct evidence that dislocation are non-radiative recombination centers in GaN
-
Sugahara T, Sato H, Hao MS, Naoi Y, Kurai S, Tottori S, Yamashita K, Nishino K, Romano LT, Sakai S. Direct evidence that dislocation are non-radiative recombination centers in GaN. Jpn J Appl Phys 1998;37(Part 2):L398-L400.
-
(1998)
Jpn J Appl Phys
, vol.37
, Issue.2 PART
-
-
Sugahara, T.1
Sato, H.2
Hao, M.S.3
Naoi, Y.4
Kurai, S.5
Tottori, S.6
Yamashita, K.7
Nishino, K.8
Romano, L.T.9
Sakai, S.10
-
32
-
-
0000900177
-
Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells
-
Wang T, Nakagawa D, Wang J, Sugahara T, Sakai S. Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells. Appl Phys Lett 1998;73:3571-3573.
-
(1998)
Appl Phys Lett
, vol.73
, pp. 3571-3573
-
-
Wang, T.1
Nakagawa, D.2
Wang, J.3
Sugahara, T.4
Sakai, S.5
-
33
-
-
0033535226
-
The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diodes
-
Wang T, Sugahara T, Sakai S, Orton J. The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diodes. To be published in Appl Phys Lett 1999;74.
-
(1999)
Appl Phys Lett
, pp. 74
-
-
Wang, T.1
Sugahara, T.2
Sakai, S.3
Orton, J.4
-
34
-
-
0345810888
-
An InGaN series yellow LED operable at high temperatures
-
1.1, 18a-YC-11
-
Mukai T et al. An InGaN series yellow LED operable at high temperatures. Papers presented at 59th Academic Session Appl Phys Soc Jpn 1998;1.1, 18a-YC-11:326.
-
(1998)
59th Academic Session Appl Phys Soc Jpn
, pp. 326
-
-
Mukai, T.1
|