Time-resolved electroluminescence spectroscopy of InxGa1 - xN single quantum well LEDs

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 593-596

  Narukawa, Yukio ^a   Saijyo, Shin ^a   Kawakami, Yoichi ^a   Fujita, Shizuo ^a   Fujita, Shigeo ^a   Nakamura, Shuji ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

InGaN; Light emitting diode; Quantum dot; Single quantum well; Time resolved electroluminescence

Indexed keywords

ELECTROLUMINESCENCE; EXCITONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS;

TIME RESOLVED ELECTROLUMINESCENCE SPECTROSCOPY;

LIGHT EMITTING DIODES;

EID: 0032089984     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00206-1     Document Type: Article

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