Surface pretreatment of bulk GaN for homoepitaxial growth by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 626-631

  Sato, Hisao ^a   Sugahara, Tomoya ^a   Hao, Maosheng ^a   Naoi, Yoshiki ^a   Kurai, Satoshi ^a   Yamashita, Kenji ^a   Nishino, Katsushi ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

Bulk GaN; CL image; Dislocation; Homoepitaxy; Substrate pretreatment

Indexed keywords

CATHODOLUMINESCENCE; ENERGY GAP; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOSPHORIC ACID; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTOR GROWTH; SILICA; SUBSTRATES; SURFACE TREATMENT;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031998287     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.626     Document Type: Article

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