Electrical properties of HgCdTe epilayers doped with silver using an AgNO3 solution

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 579-582

  Tanaka, M ^a   Ozaki, K ^a   Nishino, H ^a   Ebe, H ^a   Miyamoto, Y ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

HgCdTe; Impurity doped; Minority carrier lifetime; Photodiode

Indexed keywords

EID: 0000439379     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0018-2     Document Type: Article

References (9)

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