MWIR DLPH HgCdTe photodiode performance dependence on substrate material

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 727-732

  D'Souza, A I ^a   Bajaj, J ^b   De Wames, R E ^b   Edwall, D D ^b   Wijewarnasuriya, P S ^b   Nayar, N ^b  

^a BOEING COMPANY   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

Author keywords

HgCdTe; Infrared (IR) devices; Liquid phase epitaxy (LPE)

Indexed keywords

EID: 0011075971     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0044-0     Document Type: Article

References (11)

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