Large VLWIR Hg1-xCdxTe photovoltaic detectors

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 630-635

  D'Souza, A I ^a   Dawson, L C ^a   Staller, C ^a   Wijewarnasuriya, P S ^b   Dewames, R E ^b   Mclevige, W V ^b   Arias, J M ^b   Edwall, D ^b   Hildebrandt, G ^b  

^a BOEING COMPANY   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; INFRARED DETECTORS; INTERFEROMETRY; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; QUANTUM EFFICIENCY; REMOTE SENSING; SEMICONDUCTOR GROWTH;

MERCURY CADMIUM TELLURIDE; VERY LONG WAVELENGTH INFRARED (VLWIR) DETECTORS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033689029     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0196-z     Document Type: Article

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