Multielement cooled photoresistor on the basis of the heteroepitaxial structures HgCdTe

Avtometriya

Volumn , Issue 4, 1996, Pages 40-44

  Susov, E V ^a   Sidorov, Yn G ^a   Severtsev, V N ^a   Komov, A A ^a   Chekanova, G N ^a   Dvoretskiy, S A ^a   Varavin, V S ^a   Mikhajlov, N N ^a   D'yakonov, L I ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; HETEROJUNCTIONS; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTING DEVICES; SEMICONDUCTING TELLURIUM COMPOUNDS; SEMICONDUCTOR DEVICES;

APERTURE; SPECTRAL NOISE DENSITY;

PHOTORESISTORS;

EID: 0030180824     PISSN: 03207102     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)