Role of oxygen and carbon impurities in the radiation resistance of silicon detectors

Journal of Optoelectronics and Advanced Materials

Volumn 5, Issue 3, 2003, Pages 647-652

  Lazanu, S ^a   Lazanu, I ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

Defect kinetics; Oxygen and carbon impurities; Radiation damage; Silicon, Detectors

Indexed keywords

COSMIC RAYS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DECOMPOSITION; MATHEMATICAL MODELS; PARAMETER ESTIMATION; PROTONS;

DEFECT KINETICS; SILICON DETECTORS;

RADIATION DETECTORS;

EID: 0346334271     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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