Indium distribution within InxGa1-xN epitaxial layers: A combined resonant Raman scattering and Rutherford backscattering study

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 173-177

  Correia, R ^a   Pereira, S ^a,b   Pereira, E ^a   Alves, E ^c   Gleize, J ^d   Frandon, J ^d   Renucci, M A ^d  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541083     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<173::AID-PSSB173>3.0.CO;2-R     Document Type: Article

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