Raman scattering study of InGaN grown by metalorganic vapor phase epitaxy on (0001) sapphire substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 10, 2001, Pages 5955-5958

  Sugiura, Touko ^a   Kawaguchi, Yasutoshi ^b,d   Tsukamoto, Takehiko ^a   Andoh, Hiroya ^a   Yamaguchi, Masahito ^b   Hiramatsu, Kazumasa ^c   Sawaki, Nobuhiko ^b  

^a TOYOTA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c MIE UNIVERSITY   (Japan)

^d PANASONIC CORPORATION   (Japan)

Author keywords

Alloy semiconductor; Immiscibility; InGaN; Raman spectroscopy; Ternary compound

Indexed keywords

CRYSTAL STRUCTURE; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR GROWTH; SOLUBILITY; SUBSTRATES; TERNARY SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

ALLOY SEMICONDUCTOR; ASYMMETRIC BROADENING; DECAY LENGTH; INDIUM GALLIUM NITRIDE; INDIUM MOLAR FRACTION; SPATIAL CORRELATION MODEL; TERNARY COMPOUND;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035485249     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5955     Document Type: Article

References (16)