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Volumn 89, Issue 1, 2001, Pages 798-800

Ultraviolet Raman study of A1(LO) and E2 phonons in InxGa1-xN alloys

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0345959824     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1330760     Document Type: Article
Times cited : (53)

References (15)
  • 5
    • 0031379382 scopus 로고    scopus 로고
    • Nitride Semiconductors, edited by F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite
    • E. L. Piner, N. A. El-Masry, S. X. Liu, and S. M. Bedair, in Nitride Semiconductors, edited by F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite, MRS Symposia Proceedings No. 482 (1998), p. 125.
    • (1998) MRS Symposia Proceedings No. 482 , pp. 125
    • Piner, E.L.1    El-Masry, N.A.2    Liu, S.X.3    Bedair, S.M.4
  • 14
    • 0005988028 scopus 로고    scopus 로고
    • Nitride Semiconductors, edited by T. Strite, Materials Research Society, Pittsburgh
    • J. S. Dyck et al., in Nitride Semiconductors, edited by T. Strite, MRS Symposia Proceedings No. 482 (Materials Research Society, Pittsburgh, 1998), p. 549.
    • (1998) MRS Symposia Proceedings No. 482 , pp. 549
    • Dyck, J.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.