Analysis of strain depth variations in an In0.19Ga 0.81N layer by Raman spectroscopy

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 563-567

  Correia, M R ^a   Pereira, S ^a   Pereira, E ^a   Frandon, J ^b   Renucci, M A ^b   Alves, E ^c   Sequeira, A D ^c   Franco, N ^c  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b CNRS   (France)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; INDIUM ALLOYS; NITRIDES; PHONONS; SEMICONDUCTOR ALLOYS;

DEPTH VARIATION; FREQUENCY SHIFT; OUTGOING CHANNEL; PHONON FREQUENCIES; RESONANCE EFFECT; STRAIN VARIATION; STRONG LUMINESCENCE; STRUCTURAL AND OPTICAL CHARACTERIZATIONS;

GALLIUM ALLOYS;

EID: 29644436365     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390114     Document Type: Conference Paper

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