Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

Applied Physics Letters

Volumn 74, Issue 26, 1999, Pages 3981-3983

  Wieser, N ^a   Ambacher, O ^b   Felsl, H P ^b   Gorgens L ^b   Stutzmann, M ^b  

^a GERMAN AEROSPACE CENTER DLR   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; NITRIDES; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM INDIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0032614049     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124243     Document Type: Article

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