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Volumn 33, Issue 4, 2003, Pages 209-216
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Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs)
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Author keywords
Composite emitter; Current gain; Heterojunction phototransistor; Optical gain; Turn on voltage
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Indexed keywords
ELECTRIC CURRENTS;
ELECTRIC PROPERTIES;
OPTICAL PROPERTIES;
PHOTOTRANSISTORS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR SUPERLATTICES;
ALUMINUM GALLIUM ARSENIDE;
COMPOSITE EMITTER HETEROJUNCTION BIPOLAR TRANSISTOR;
COMPOSITE EMITTER HETEROJUNCTION PHOTOTRANSISTOR;
INDIUM GALLIUM PHOSPHIDE;
OPTICAL GAIN;
SUPERLATTICE EMITTER;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0345829245
PISSN: 07496036
EISSN: None
Source Type: Journal
DOI: 10.1016/S0749-6036(03)00079-X Document Type: Article |
Times cited : (22)
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References (13)
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