Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs δ-doped single heterojunction bipolar transistors using an InGaP passivation layer

Semiconductor Science and Technology

Volumn 13, Issue 8, 1998, Pages 847-851

  Lour, W S ^a   Hsieh, J L ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007651648     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/8/003     Document Type: Article

References (19)

1. Monday M J and Kroemer H 1985 Heterojunction bipolar transistor using (Ga, In)P emitter on a GaAs base, grown by MBE IEEE Electron Device Lett. EDL-6 175
2. Delage S L, Poisson M A D, Blanck H, Brylinski C, Chartier E and Collot P 1991 First microwave characterization of LP-MOCVD grown GaInP/GaAs self-aligned HBT Electron. Lett. 27 253
3. Ren F et al 1993 Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application IEEE Electron Device Lett. EDL-14 332
4. Hu J, Zhang Q M, Surridge R K, Xu J M and Pavlidis D 1993 A new emitter design of InGaP/GaAs HBT's for high-frequency applications IEEE Electron Device Lett. EDL-14 563
5. Lothian J R, Kuo J M, Ren F and Pearton S J 1992 Plasma and wet etching of InGaP Electron Mater. 12 441
6. Abernathy C R, Ren F, Wisk P W, Pearton S J and Esagui R 1992 Improved performance of carbon doped GaAs base heterojunction bipolar transistor through the use of InGaP Appl. Phys. Lett. 61 1092
7. Kobayashi T, Taira K, Nakamura F and Kawai H 1989 Band lineup for GaInP/GaAs heterojunction measured by high-gain npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition J. Appl. Phys. 65 4898
8. 0.51P/GaAs tunnelling emitter bipolar transistors grown by gas source molecular beam epitaxy IEEE Electron Device Lett. EDL-13 468
9. Ren F, Abernathy C R, Pearton S J, Wisk P W and Esagui R 1992 InGaP/GaAs based single and double heterojunction bipolar transistors grown in MOMBE Electron. Lett. 28 1150
10. 0.51P/GaAs double-barrier bipolar transistor IEEE Electron Device Lett. EDL-13 418
11. Chen Y K, Rapre R, Tsang W T and Wu M C 1992 InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBE Electron. Lett. 28 1228
12. max, and breakdown voltage IEEE Electron Device Lett. EDL-15 10
13. Liu W, III E B and Khatibzadeh A 1994 1.5 CW S-band GaInP/GaAs/GaInP double heterojunction bipolar transistor IEEE Electron Device Lett. EDL-15 215
14. 0.5P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base IEEE Electron Device Lett. EDL-14 25
15. Yang Y F, Hsu C C and Yang E S 1995 Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain IEEE Trans. Electron Devices ED-24 1383
16. Yang Y F, Hsu C C, Yang E S and Chen Y K 1995 Comparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunctions bipolar transistors IEEE Trans. Electron Devices Ed-42 1210
17. Lour W S 1997 High-gain low offset voltage, and zero potential spike by InGaP/GaAs 6-doped single heterojunction bipolar transistor (δ-SHBT) IEEE Trans. Electron Devices ED-44 346
18. Liu W, Beam E, Henderson T and Fan S K 1993 Extrinsic base surface passivation in GaInP/GaAs heterojunction bipolar transistors IEEE Electron Device Lett. EDL-14 301
19. Chen H R, Huang C H, Chang C Y, Lee C P, Tsai K L and Tsang J S 1994 Heterojunction bipolar transistors with emitter barrier lowered by δ-doping IEEE Electron Device Lett. EDL-15 286