Optical characteristics of InGaP/GaAs HPTs

IEEE Electron Device Letters

Volumn 22, Issue 7, 2001, Pages 315-317

  Song, Chung Kun ^a   Lee, Sang Hun ^a   Kim, Kang Dae ^a   Park, Jae Hong ^a   Koo, Bon Won ^a   Kim, Do Hyun ^a   Hong, Chang Hee ^a   Kim, Yong Kyu ^b   Hwang, Sung Bum ^c  

^a Dong A University   (South Korea)

^b Geo Chang Polytechnic College   (South Korea)

^c Kyungnam College of Information and Technology   (South Korea)

Author keywords

HBT; HPT; InGaP; Optoelectronic integrated circuits; Photodetector; Surface recombination; Thermionic emission; Transient response

Indexed keywords

CAPACITANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; INTERFACES (MATERIALS); OPTICAL PROPERTIES; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMIONIC EMISSION;

HETEROJUNCTION PHOTOTRANSISTOR; INDIUM GALLIUM PHOSPHIDE; SURFACE RECOMBINATION; TRANSIENT RESPONSE;

PHOTOTRANSISTORS;

EID: 0035396717     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.930676     Document Type: Article

References (7)

1. A 46 GHz bandwidth monolithic InP/InGaAs PIN/SHBT-photoreceiver
2. High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure
3. Monolithic integrated photoreceiver implemented with GaAs/GaAlAs heterojunction bipolar phototransistor and transistors
4. Effect of InGaP heteropassivation on reliability of GaAs HBTs
5. Extrinsic base surface passivation in GaInP/GaAs heterojunction bipolar transistors
6. Comparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistors
7. Performance enhancement of GaInP/GaAs heterojunction bipolar phototransistors using DC base bias