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Volumn 49, Issue 8, 2002, Pages 1329-1335

Significant operating voltage reduction on high-speed GaAs-based heterojunction bipolar transistors using a low band gap InGaAsN base layer

(8) Monier, Cédric a,b Baca, Albert G a,b Chang, Ping Chih a,b Newman, Frederick D c Li, N Y c Sun, S Z d Armour, Eric d Hou, H Q c

a IEEE (United States)

b SANDIA NATIONAL LABORATORIES (United States)

c Emcore Photovoltaics (United States)

d EMCORE CORPORATION (United States)

Author keywords

GaAs based devices; Heterojunction bipolar transistors (HBTs); InGaAsN material system; RF performance under low bias conditions; Turn on voltage reduction

Indexed keywords

BAND GAP; BASE EMITTER; CONDUCTION BAND SPIKE; CURRENT GAIN; CUTOFF FREQUENCY; EPITAXIAL STRUCTURE; LATTICE MATCH; OSCILLATION FREQUENCY;

BAND STRUCTURE; CRYSTAL LATTICES; EPITAXIAL GROWTH; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERFORMANCE; THRESHOLD VOLTAGE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0036685470 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/TED.2002.801304 Document Type: Article

Times cited : (15)

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