Effects of wet-oxidation treatment on Al0.45Ga 0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage

Applied Physics Letters

Volumn 80, Issue 18, 2002, Pages 3436-3438

  Lour, Wen Shiung ^a   Wu, Yen Wei ^a   Tan, Shih Wei ^a   Tsai, Ming Kwen ^b   Yang, Ying Jay ^b  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BASE CURRENTS; COLLECTOR CURRENTS; CONDUCTION BAND OFFSET; CURRENT GAINS; FIXED BASE; GRADED COMPOSITION; MOLE FRACTION; OFFSET VOLTAGE; PASSIVATION LAYER; POTENTIAL SPIKE; SURFACE PASSIVATION;

ALUMINUM; GALLIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; PASSIVATION; SUPERLATTICES;

OXIDATION;

EID: 79955989353     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1473861     Document Type: Article

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