High-gain, low offset voltage, and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor (δ-SHBT)

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 346-348

  Lour, Wen Shiung ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; FABRICATION; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

BULK RECOMBINATION EFFECT; CHARGE STORAGE; HETEROSTRUCTURE EMITTER BIPOLAR TRANSISTORS; SINGLE HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031077777     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557731     Document Type: Article

References (12)

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