Performance enhancement of GaInP/GaAs heterojunction bipolar phototransistors using DC base bias

Journal of Lightwave Technology

Volumn 16, Issue 6, 1998, Pages 1101-1106

  Sridhara, Ravi ^a,c,d,e,m   Frimel, Steven M ^a,d,f,m   Roenker, Kenneth P ^a,f,g,h,m   Pan, Noren ^b,i,j,k,l,m   Elliott, James ^b,k,l  

^a 705 Engineering Research Center   (United States)

^b KOPIN CORPORATION   (United States)

^c UNIVERSITY OF DELHI   (India)

^d UNIVERSITY OF CINCINNATI   (United States)

^e CARNEGIE MELLON UNIVERSITY   (United States)

^f Eta Kappa Nu ^*  (United States)

^g Thomas More College   (United States)

^h IOWA STATE UNIVERSITY   (United States)

ⁱ UNIVERSITY OF NORTH DAKOTA   (United States)

^j UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^k RAYTHEON COMPANY   (United States)

^l NORTHEASTERN UNIVERSITY   (United States)

^m IEEE   (United States)

more..

Author keywords

GaInP GaAs bipolar transistor; Heterojunction bipolar transistor; Optical detector; Optical receiver; Phototransistor

Indexed keywords

CURRENT DENSITY; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE;

OPTICAL RECEIVERS;

PHOTOTRANSISTORS;

EID: 0032095211     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.681470     Document Type: Article

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