Evidence of optical gain improvement in AlGaAs/GaAs heterojunction phototransistors using an emitter shoulder structure

IEEE Transactions on Electron Devices

Volumn 48, Issue 7, 2001, Pages 1333-1339

  Bansropun, S ^a   Woods, R C ^a   Roberts, J S ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Bipolar transistors; Heterojunction phototransistors; Internal quantum efficiency; Leakage current; Recombination processes

Indexed keywords

LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOTRANSISTORS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

HETEROJUNCTION PHOTOTRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035397414     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.930648     Document Type: Article

References (18)

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