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Volumn 166, Issue 1-4, 1996, Pages 628-630
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Low-temperature epitaxial growth of InP by remote plasma-assisted metalorganic chemical vapour deposition
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
DECOMPOSITION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PLASMA APPLICATIONS;
PLASMA HEATING;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTING SILICON;
SUBSTRATES;
THERMAL EFFECTS;
CRYSTAL GROWTH RATE;
HETEROEPITAXIAL GROWTH;
HOMOEPITAXIAL GROWTH;
PHOSPHINE;
REMOTE HYDROGEN PLASMA;
SPECULAR SURFACE;
EPITAXIAL GROWTH;
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EID: 0030231170
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00479-3 Document Type: Article |
Times cited : (3)
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References (10)
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