Low-temperature epitaxial growth of InP by remote plasma-assisted metalorganic chemical vapour deposition

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 628-630

  Sugino, Takashi ^a   Maeda, Masahiro ^a   Kawarai, Ken'ichi ^a   Shirafuji, Junji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DECOMPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA APPLICATIONS; PLASMA HEATING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS;

CRYSTAL GROWTH RATE; HETEROEPITAXIAL GROWTH; HOMOEPITAXIAL GROWTH; PHOSPHINE; REMOTE HYDROGEN PLASMA; SPECULAR SURFACE;

EPITAXIAL GROWTH;

EID: 0030231170     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00479-3     Document Type: Article

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