Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates

Journal of Applied Physics

Volumn 79, Issue 11, 1996, Pages 8367-8370

  Chyi, J I ^a   Shieh, J L ^a   Pan, J W ^a   Lin, R M ^a,b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000082012     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362555     Document Type: Review

References (16)

1. J.-I. Chyi, J.-L. Shieh, C.-S. Wu, R.-M. Lin, J.-W. Pan, Y.-J. Chan, and C. H. Lin, Jpn. J. Appl. Phys. 33, L1574 (1994).
2. D. I. Westwood, D. A. Woolf, A. Vila, A. Cornet, and J. R. Morante, J. Appl. Phys. 74, 1731 (1993).
3. Y.-J. Chan, J.-I. Chyi, C.-S. Wu, H.-P. Hwang, M.-T. Yang, R.-M. Lin, and J.-L. Shieh, 1994 Device Research Conference, Boulder, CO, 1994.
4. H. P. Hwang, J. L. Shieh, R. M. Lin, J. I. Chyi, S. L. Tu, C. K. Peng, and S. J. Yang, Electron. Lett. 30, 826 (1994).
5. V. Krishnamoorthy, Y. W. Lin, L. Calhoun, H. L. Liu, and R. M. Park, Appl. Phys. Lett. 61, 2680 (1992).
6. J.-I. Chyi, J.-L. Shieh, R.-M. Lin, T.-E. Nee, and J.-W. Pan, Appl. Phys. Lett. 65, 699 (1994).
7. L. B. Freund, J. Appl. Phys. 68, 2073 (1990).
8. V. Krishnamoorthy, P. Ribas, and R. M. Park, Appl. Phys. Lett. 58, 2000 (1991)
9. L. J. Schowalter, E. L. Hall, and N. Lewis, Thin Solid Films 184, 473 (1990).
10. J. Weertman and J. R. Weertman, Elementary Dislocation Theory (Oxford University Press, New York, 1992).
11. G. H. Olsen and R. T. Smith, Phys. Status Solidi A 31, 739 (1975).
12. J. Kleiman, R. M. Park, and H. A. Mar, J. Appl. Phys. 64, 1201 (1988).
13. S. K. Ghandhi and J. E. Ayers, Appl. Phys. Lett. 53, 1204 (1988).
14. H. Nagai, J. Appl. Phys. 45, 3789 (1974).
15. J. E. Ayers, S. K. Ghandhi, and L. J. Showalter, J. Cryst. Growth 113, 430 (1991).
16. K. L. Kavanagh, J. C. P. Chang, J. Chen, J. M. Fernandez, and H. H. Wieder, J. Vac. Sci. Technol. B 10, 1820 (1992).