Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures

Solid-State Electronics

Volumn 45, Issue 7, 2001, Pages 1149-1152

  Luo, B ^a   Johnson, J W ^a   Schoenfeld, D ^b   Pearton, S J ^b   Ren, F ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

GaAs MESFET; I V characteristics; Irradiation; TLM

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GAMMA RAYS; GATES (TRANSISTOR); LEAKAGE CURRENTS; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSMISSION LINE THEORY;

SATURATION DRAIN CURRENTS;

MESFET DEVICES;

EID: 0035390422     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00064-8     Document Type: Article

References (12)