Point defects in γ-irradiated n-GaN

Semiconductor Science and Technology

Volumn 15, Issue 1, 2000, Pages 73-78

  Emtsev, V V ^a   Davydov, V Yu ^a   Kozlovskii, V V ^a   Lundin, V V ^a   Poloskin, D S ^a   Smirnov, A N ^a   Shmidt, N M ^a   Usikov, A S ^a   Aderhold, J ^b   Klausing, H ^b   Mistele, D ^b   Rotter, T ^b   Stemmer, J ^b   Semchinova, O ^b   Graul, J ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GAMMA RAYS; HALL EFFECT; HEATING; IRRADIATION; POINT DEFECTS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

REVERSE ANNEALING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033639639     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/1/313     Document Type: Article

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