In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane: Adsorption properties and initial deposition characteristics

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1464-1468

  Yoon, H G ^a   Boo, J H ^a   Liu, W L ^a   Lee, S B ^a   Park, S C ^b   Kang, H ^b   Kim, Y ^c  

^a Sungkyunkwan University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BINDING ENERGY; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; MONOLAYERS; PARAFFINS; SILICON; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DISILABUTANE;

SILICON CARBIDE;

EID: 0034228021     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582470     Document Type: Article

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