New developments in mid-infrared Sb-based lasers

Journal De Physique. IV : JP

Volumn 9, Issue 2, 1999, Pages

  Joullie A ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

AUGER PROCESS SUPPRESSION; ELECTRON HOLE; LASER HETEROSTRUCTURES; MID INFRARED LASERS; QUANTUM CASCADE STRUCTURES;

QUANTUM WELL LASERS;

EID: 0345201661     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:1999209     Document Type: Article

References (124)

1. H.A. Gebbie, W.R. Harding, C. Hilsum, A.W. Pryce and V. Roberts, Proc. Roy. Soc. A 206 (1951) 87
2. L.S. Rothman, R.R. Gamache, R.H. Tipping, C.P. Rinsland, M.A.H. Smith, D.C. Benner, V.M. Devi, J.M. Flaud, C. Camy-Peyret, A. Perrin, A. Goldman, S.T. Massie, L.R. Brown and R.A. Toth, "The HITRAN molecular database : editions of 1991 and 1992", J Quant. Spectrosc. Radial. Transf. 48 (1992) 469
3. Ph. Bouchut, G. Destefanis, A. Million, T. Colin and J. Bablet, J. Electron. Mater. 22 (1993) 1061
4. M. Zandian, J.M. Arias, R. Zucca, R.V. Gil and H. Shin, Appl. Phys. Lett. 59, (1991) 1022
5. J.M. Arias, M. Zandian, R. Zucca and J. Singh, Semicond. Sci. Technol. 8 (1993) S 255
6. A. Ravid, A. Sher, G. Cinader and A. Zussman, J. Appl. Phys. 73 (1993) 7102
7. H.Q. Le, J.M. Arias, M. Zandian, R. Zucca and Y.Z. Liu, Appl. Phys. Lett. 65 (1994) 810
8. D.L. Partin, J.P. Heremans and C.M. Trush, Superlattices and Microstructures 2 (1986) 459
9. D.L Partin, IEEE J. Quantum Electr. QE-24 (1988) 1716
10. B. Spanger, U. Schiessl, A. Lambrecht, H. Böttner and M. Tacke, Appl. Phys. Lett. 53 (1988) 2582
11. A. Ishida, K. Muramatsu, H. Takashiba and H. Fujiyasu, Appl. Phys. Lett. 55 (1989) 430
12. Z. Shi, M. Tacke, A. Lambrecht and H. Böttner, Appl. Phys. Lett. 66 (1995) 2537
13. Z. Feit, M. McDonald, R.J. Woods, V. Archambault and P. Mak, Appl. Phys. Lett. 68 (1996) 738
14. J.L. Zyskind, J.C. De Winter, C.A. Burrus, J.C. Centanni, A.G. Dentai and M.A. Pollack, Electron. Lett. 25 (1989) 568
15. H.K. Choi and S.J. Eglash, Appl. Phys. Lett. 61 (1992) 1154
16. M. Aydaraliev, N.V. Zotova, S.A. Karandashev, B.A. Matveev, N.M. Stus' and G.N. Talalakin, Semiconductors 27 (1993) 10
17. A.N. Baranov, C. Fouillant, P. Grunberg, J.L. Lazzari, S. Gaillard and A. Joullié, Appl. Phys. Lett. 65 (1994) 616
18. P. Grunberg, A. Baranov, C. Fouillant, J.L. Lazzari, P. Grech, G. Boissier, C. Alibert and A. Joullié, Electron. Lett. 30 (1994) 312
19. H.K. Choi, G.W. Turner and S.J. Eglash, IEEE Photon. Technol. Lett. 6 (1994) 7
20. H.K. Choi, S.J. Eglash and G.W. Turner, Appl. Phys. Lett. 64 (1994) 2474
21. H.K. Choi, G.W. Turner and Z.L. Liau, Appl. Phys. Lett. 65 (1994) 2251
22. S.J. Eglash and H.K. Choi, Appl. Phys. Lett. 64 (1994) 833
23. H. Lee, P.K. York, R.J. Menna, R.U. Martinelli, D.Z. Garbuzov, S.Y. Narayan and J.C. Connolly, Appl. Phys. Lett. 66 (1995) 1942
24. H.K. Choi, G.W. Turner and H.Q. Le, Appl. Phys. Lett. 66 (1995) 3543
25. H.K. Choi and G.W. Turner, Appl. Phys. Lett. 67 (1995) 332
26. H.K. Choi, G.W. Turner, M.K. Connors, S. Fox, C. Dauga and M. Dagenais, IEEE Photon. Technol. Lett. 7 (1995) 281
27. H.K. Choi, G.W. Turner and M.J. Manfra, Electron. Lett. 32 (1996) 1296
28. A. Popov, V. Sherstnev, Yu. Yakovlev, R. Mücke and P. Werle, Appl. Phys. Lett. 68 (1996) 2790
29. A. Popov, V. Sherstnev, Yu. Yakovlev, R. Mücke and P. Werle, Spectrochimica Acta part A 52 (1996) 863
30. T.N. Danilova, O.G. Ershov, A.N. Imenkov, M.V. Stepanov, V.V. Sherstnev and Yu.P. Yakovlev, Semiconductors 30 (1996) 667
31. D. Wu, E. Kaas, J. Diaz, B. Lane, A. Rybaltowski, H.J. Yi and M. Razeghi, IEEE Photon. Technol. Lett. 9 (1997) 173
32. Y.H. Zhang, Appl. Phys. Lett. 66 (1995) 118
33. Y.H. Zhang, H. Miles and D. Chow, IEEE J. of Selected Topics in Quantum Electronics 1 (1995) 749
34. S.R. Kurtz, R.M. Biefeld, A.A. Allerman, A.J. Howard, M.H. Crawford and M.W. Pelczynski, Appl. Phys. Lett. 68 (1996) 1332
35. A.A. Allerman, R.M. Biefeld and S.R. Kurtz, Appl. Phys. Lett. 69 (1996) 465
36. A.N. Baranov, Y. Cuminal, G. Boissier, C. Alibert and A. Joullié, Electron. Lett. 32 (1996) 2279
37. A.N. Baranov, G. Boissier, Y. Cuminal, A. Joullié and C. Alibert, OE'97, SPIE's Int. Symposium, San Jose, 8-14 february 1997, to appear in SPIE proceedings vol. 2997.
38. Y. Cuminal, A.N. Baranov, N. Bertru and A. Joullié "the use of GaInAsSb/A1GaAsSb system for 2-4 μm laser emission" submitted to publication
39. D.H. Chow, R.H. Miles, T.C. Hasenberg, A.R. Kost, Y.H. Zhang, H.L. Dunlap and L. West, Appl. Phys. Lett. 67 (1995) 3700
40. T.C. Hasenberg, D.H. Chow, A.R. Kost, R.H. Miles and L. West, Electron. Lett. 31 (1995) 275
41. R.H. Miles, D.H. Chow, Y.H. Zhang, P.D. Brewer and R.G. Wilson, Appl. Phys. Lett. 66 (1995) 1921
42. J.I. Malin, J.R. Meyer, C.L. Felix, J.R. Lindle, L. Goldberg, C.A. Hoffman, F.J. Bartoli, C.H. Lin, P.C. Chang, S.J. Murry, R.Q. Yang and S.S. Pei, Appl. Phys. Lett. 68 (1996) 2976
43. J.I. Malin, C.L. Felix, J.R. Meyer, C.A. Hoffman, J.F. Pinto, C.H. Lin, P.C. Chang, S.J. Murry and S.S. Pei, Electron. Lett. 32 (1996) 1593
44. R.H. Miles, Int. Conf. on "Mid-Infrared Optoelectronics ; Materials and Devices", Lancaster (UK), Sept. 1996
45. C.H. Lin, P.C. Chang, S.J. Murry, D. Zhang, R.Q. Yang, S.S. Pei, J.I. Malin, J.R. Meyer, C.L. Felix, J.R. Lindle, L. Goldberg, C.A. Hoffman and E.J. Bartoli., to be published in J. Electronic Materials (1997)
46. A.N. Baranov, N. Bertru, Y. Cuminal, G. Boissier, C. Alibert and A. Joullié, "observation of room temperature laser emission from a type-III InAs/GaSb multiple quantum well structure" submitted to publication 1997
47. J. Faist, F. Capasso, D.L. Sivco, C. Sirtori, A.L. Hutchinson and A.Y. Cho, Science 264 (1994) 553
48. J. Faist, F. Capasso, D.L. Sivco, C. Sirtori, A.L. Hutchinson and A.Y. Cho, Electron. Lett. 30 (1994) 865
49. J. Faist, F. Capasso, D.L. Sivco, A.L. Hutchinson, C. Sirtori, S.N.G. Chu and A.Y. Cho, Appl. Phys. Lett. 65 (1994) 2901
50. J. Faist, F. Capasso, C. Sirtori, D.L. Sivco, A.L. Hutchinson, S.N.G. Chu and A.Y. Cho, Appl. Phys. Lett. 65 (1994) 94
51. J. Faist, F. Capasso, C. Sirtori, D.L. Sivco, A.L. Hutchinson and A.Y. Cho, Appl. Phys. Lett. 66 (1995) 538
52. J. Faist, F. Capasso, C. Sirtori, D.L. Sivco, A.L. Hutchinson and A.Y. Cho, Appl. Phys. Lett. 67 (1995) 3057
53. J. Faist, F. Capasso, C. Sirtori, D.L. Sivco, A.L. Hutchinson and A.Y. Cho, Electron. Lett. 32 (1996) 560
54. J. Faist, F. Capasso, C. Sirtori, D.L. Sivco, J.N. Baillargeon, A.L. Hutchinson, S.N.G. Chu and A.Y. Cho, Appl. Phys. Lett. 68 (1996) 3680
55. C. Sirtori, J. Faist, F. Capasso, D.L. Sivco, A.L. Hutchinson and A. Cho, Appl. Phys. Lett. 69 (1996) 2810
56. C. Sirtori, J. Faist, F. Capasso, D.L. Sivco, A.L. Hutchinson and A. Cho, IEEE J. Quantum Electron. 33 (1997) 89
57. C.H. Grein, P.M. Young and H. Ehrenreich, Appl. Phys. Lett. 61 (1992) 2905
58. C.H. Grein, P.M. Young and H. Ehrenreich, J. Appl. Phys. 76 (1994) 1940
59. E.R. Youngdale, J.R. Meyer, C.A. Hoffman, F.J. Bartoli, C.H. Grein, P.M. Young, H. Ehrenreich, R.H. Miles and D.H. Chow, Appl. Phys. Lett. 64 (1994) 3160
60. M.E. Flatté, C.H. Grein, H. Ehrenreich, R.H. Miles and H. Cruz, J. Appl. Phys. 78 (1995) 4552
61. G.G. Zegrya and A.D. Andreev, Appl. Phys. Lett. 67 (1995) 2681
62. G.G. Zegrya and A.D. Andreev, J.E.T.P. 82 (1996) 328
63. J.R. Meyer, C.A. Hoffman, F.J. Bartoli and L.R. Ram-Mohan, Appl. Phys. Lett. 67 (1995) 757
64. C.M. Ciesla, B.N. Murdin, C.R. Pidgeon, R.A. Stradling, C.C. Phillips, M. Livingston, I. Galbraith, D.A. Jaroszynski, C.J. Langerak, P.J. Tang and M.J. Pullin, J. Appl. Phys. 80 (1996) 2994
65. R.Q. Yang, Superlattices and Microstructures 17 (1995) 77
66. R.Q. Yang and S.S. Pei, J. Appl. Phys. 79 (1996) 8197
67. J.R. Meyer, I. Vurgaftman, R.Q. Yang and L.R. Ram-Mohan, Electron. Lett. 32 (1996) 45
68. I. Vurgaftman, J.R. Meyer and L.R. Ram-Mohan, IEEE Photon. Technol. Lett. 9 (1997) 170
69. Y. Rouillard, B. Lambert, Y. Toudic, M. Baudet and M. Gauneau , J. Crystal Growth 156 (1995) 30
70. J. Massies, M. Leroux, Y. Martinez, P. Vennegues and S. Laugt, J. Crystal Growth 160 (1996) 211
71. Y.H. Zhang and D.H. Chow, Appl. Phys. Lett. 65 (1994) 3239
72. G.W. Turner, H.K. Choi, D.R. Calawa, J.V. Pantano and J.W. Chludzinski, J. Vac. Sci. Technol. B 12 (1994) 1266
73. M. Yano, H. Furuse, Y. Iwai, K. Yoh and M. Inoue, J. Crystal Growth 127 (1993) 807
74. B. Bennet, B. Shanabrook, R. Wagner, J. Davis and J. Waterman, Appl. Phys. Lett. 63 (1993) 949
75. R.H. Miles, D.H. Chow, J.N. Schulman and T.C. McGill, Appl. Phys. Lett. 57 (1990) 801
76. R.H. Miles, D.H. Chow and W.J. Hamilton, J. Appl. Phys. 71 (1992) 211
77. D.H. Chow, Y.H. Zhang, R.H. Miles and H.L. Dunlap, J. Crystal Growth 150 (1995) 879
78. G. Tuttle, H. Kroemer and J. English, J. Appl. Phys. 67 (1990) 3032
79. G.W. Turner, H.K. Choi and H.Q. Le, J. Vac. Sci. Technol. B 13 (1995) 699
80. G.W. Turner, M.J. Manfra, H.K. Choi and M.K. Connors, 9th Int. Conf. MBE, to be published in J. Crystal Growth (1997)
81. J. Bhan, A. Joullié, H. Mani, A.M. Joullié and C. Alibert, SPIE "Materials and Technologies for Optical Communications" vol. 866 (1987) 126
82. S.R. Kurtz and R.M. Biefeld, Appl. Phys. Lett. 66 (1995) 364
83. S.H. Wei and A. Zunger, Phys. Rev. B 52 (1995) 12039
84. P.J. Tang, M.J. Pullin, Y.B. Li, C.C. Phillips, R.A. Stradling, S.J. Chung, W.T. Yuen, L. Hart, D.J. Bain and I. Galbraith, Appl. Phys. Lett. 69 (1996) 2501
85. M. Mebarki, A. Kadri and H. Mani, Solid State Comm. 78 (1989) 795
86. A.N. Baranov, E.A. Grebenshchikova, B.E. Dzhurtanov, T.N. Danilova, A.N. Imenkov and Yu.P. Yakovlev, Sov. Tech. Phys. Lett. 14 (1988) 798
87. A. Haug, D. Kerkhoff and W. Lochman, Phys. Stat. Sol. (b) 89 (1978) 357
88. B.L. Gel'mont, Z.N. Sokolova and I.N. Yassievich, Sov. Phys. Semicond. 16 (1982) 382
89. I.A. Andreev, M.P. Mikhailova, A.N. Semenov, S.V. Slobodchikov, N.M. Stus' and G.M. Filaterova, Sov. Phys. Semicond. 18 (1984) 338
90. A. Sugimura, IEEE J. Quantum Electron. QE-18 (1982) 352
91. Y. Tsou, A. Ichii and E.M. Garmire, IEEE J. Quantum Electron. 28 1261 (1992)
92. F. Karouta, H. Mani, J. Bhan, Fan Jia Hua and A. Joullié, Revue Phys. Appl. 22 (1987) 1459
93. A.R. Adams, Electron. Lett. 22 (1986) 249
94. E. Yablonovitch and E.O. Kane, J. Lightwave Technol. LT-4 (1986) 504
95. A. Ghiti and E.P. O'Reilly, Semicond. Sci. Technol. 8 (1993) 1655
96. E.P. O'Reilly and A.R. Adams, IEEE J. Quantum Electron. 30 (1994) 366
97. H.P. Hjalmarson and S.R. Kurtz, Appl. Phys. Lett. 69 (1996) 949
98. A.D. Andreev and G.G. Zegrya, Appl. Phys. Lett. 70 (1997) 601
99. J.R. Lindle, J.R. Meyer, C.A. Hoffman, F.J. Bartoli, G.W. Turner and H.K. Choi, Appl. Phys. Lett. 67 (1995) 3153
100. J.L. Lazzari, E. Tournié, F. Pitard, A. Joullié and B. Lambert, Materials Sci. Engineering, B9 (1991) 125
101. C. Fouillant-Segura, A.N. Baranov, P. Gregh, A. Joullié, G. Glastre and R. Blondeau, unpublished work.
102. Z.L. Liau and H.K. Choi, Appl. Phys. Lett. 64 (1994) 3219
103. S.R. Kurtz, R.M. Biefeld and A.J. Howard, Appl. Phys. Lett. 67 (1995) 3331
104. S.R. Kurtz, R.M. Biefeld and L.R. Dawson, Phys. Rev. B51 (1995) 7310
105. S.R. Kurtz, R.M. Biefeld, L.R. Dawson, K.C. Baucom and A.J. Howard, Appl. Phys. Lett 64 (1994) 812
106. S.W. Mc Cahon, S.A. Anson, D.J. Jang, M.E. Flatté, T.F. Boggess, D.H. Chow, T.C. Hasenberg and C.H. Grein, Appl. Phys. Lett. 68 (1996) 2135
107. W.T. Tsang, Semiconductors and Semimetals, ed. R. Dingle, Academic, New York, vol. 24 (1987) chap.7.
108. L.R. Ram-Mohan and J.R. Meyer, J. Nonlinear Opt. Phys. and Mater. 4 (1995) 191
109. D.L. Smith and C. Mailhiot, J. Appl. Phys. 62 (1987) 2545
110. R.H. Miles, D.H. Chow, J.N. Schulman and T.C. Mc Ghil, Appl. Phys. Lett. 57 (1990) 801.
111. L. Esaki and L.L. Chang, J. Magn. Mat. 11 (1979) 208
112. L.L. Chang, N.J. Kawai, G.A. Sai-Halasz, R. Ludeke and L. Esaki, Appl. Phys. Lett. 35 (1979) 939
113. L.L. Chang and L. Esaki, Surface Science, 98 (1980) 70
114. P. Voisin, G. Bastard, C. Gonçalvés da Silva, M. Voos, L.L. Chang and L. Esaki, Solid State Comm. 39 (1981) 79
115. S.M. Chen, Y.K. Su, Y.K. Chyn, Y.T. Lu and C.F. Yu, IEEE Photon. Technol. Lett. 7 (1995) 1192 (and references therein)
116. F. Fuchs, N. Herres, J. Schmitz, K.M. Pavlov, J. Wagner, P. Koidl and J.H. Roslund, in Proc. of the SPIE Conf. on "Growth and Characterization of Materials for Infrared Detectors II", San Diego, 1995, Proc. SPIE 2554 (1995) 70
117. J. Wagner, F. Fuchs, N. Herres, J. Schmitz and P. Koidl, Proc. of the third Int. Symp.on "Long Wavelength Infrared Detectors and Arrays : Physics and Applications", 188th Meetings of the Electrochemical Society, Chicago (1995), Ed. W. Beck, S. Li, H. Liu, M. Tidrow and A. Singh, Electrochemical Society Proceedings Vol. 95-28 (1995) 201
118. J.R. Waterman, B.V. Shanabrook, R.J. Wagner, M.J. Yang, J.L. Davis and J.P. Omaggio, Semicond. Sci. Technol. 8 (1993) S 106
119. J. Schmitz, J. Wagner, F. Fuchs, N. Herres, P. Koidl and J.D. Ralston, J. Crystal Growth 150 (1995) 858
120. G. Bastard, Phys. Rev. B 24 (1981) 5693
121. R.Q. Yang, C.H. Lin, P.C. Chang, S.J. Murry, D. Zhang, S.S. Pei, S.R. Kurtz, A.N. Chu and F. Ren, Electron. Lett. 32 (1996) 1621
122. S. Kim, M. Erdtmann, D. Wu, E. Kass, H. Yi, J. Diaz and M. Razeghi, Appl. Phys. Lett. 69 (1996) 1614
123. H.K. Choi and S.J. Eglash, Appl. Phys. Lett. 59 (1991) 1165
124. K.D. Moiseev, M.P. Mikhailova, O.G. Ershov and Yu.P. Yakovlev, Semiconductors 30 (1996) 223