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Journal of Crystal Growth

Volumn 160, Issue 3-4, 1996, Pages 211-219

Molecular beam epitaxy of GaSb/AlxGa1-xSb quantum well structures

(5) Massies, J a Leroux, M a Martinez, Y a Vennegues, P a Laugt S a

a CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE PHENOMENA; TEMPERATURE;

GALLIUM ANTIMONIDE; GROWTH TEMPERATURE; QUANTUM WELL STRUCTURE PARAMETERS; QUANTUM WELL STRUCTURES; SURFACE SEGREGATION LIKE PHENOMENON; VALENCE BAND;

MOLECULAR BEAM EPITAXY;

EID: 0030109325 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00748-2 Document Type: Article

Times cited : (13)

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