High CW power (>200mW/facet) at 3.4μm from InAsSb/lnAlAsSb strained quantum well diode lasers

Electronics Letters

Volumn 32, Issue 14, 1996, Pages 1296-1297

  Choi, H K ^a   Turner, G W ^a   Manfra, M J ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HIGH POWER LASERS; INFRARED RADIATION; LASER WINDOWS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS;

ATMOSPHERIC TRANSMISSION WINDOWS; INTERNAL LOSS COEFFICIENT; LASER RADARS; OUTPUT POWER; QUANTUM CASCADE LASERS;

QUANTUM WELL LASERS;

EID: 0030568681     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960873     Document Type: Article

References (9)

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2. LEE, H., YORK, P.K., MENNA, R.J., MARTINELLI, R.U., GARBUZOV, D.Z., NARYAN, S.Y., and CONNOLLY, J.C.: 'Room-temperature 2.78μm AlGaAsSb/InGaAsSb quantum-well lasers', Appl. Phys. Lett., 1995, 66, (15), pp. 1942-1944
3. FAIST, J., CAPASSO, F., SIRTORI, C., HUTCHINSON, A.L., SIVCO, D.L., and CHO, A.Y.: 'Continuous-wave quantum cascade lasers in the 4-10 μm wavelength region'. Laser Diode and Applications II, SPIE OE/LASE '96, San Diego, California, 29-31 January 1996, Paper 2682-2728
4. CHOI, H.K., TURNER, G.W., MANFRA, M.J., CONNORS, M.K., HERRMANN, F.P., BALIGA, A., and ANDERSON, N.G.: 'InAsSb/InAlAsSb quantum-well diode lasers emitting beyond 3μm'. Laser Diode and Applications II, SPIE OE/LASE '96, San Jose, California, 9-31January, 1996, Paper 2682-42
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7. ZHANG, Y.H, LE, H.Q., CHOW, D.H., and MILES, R.H.: 'Mid infrared lasers grown by modulated molecular bean epitaxy,' in RENO, J.L. (Ed.): 'Narrow gap semiconductors 1995' (IOP Publishing, Bristol, England, 1995), pp.36-40
8. CHOI, H.K., and TURNER, G.W.: 'InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9μm', Appl. Phys. Lett., 1995, 67, (3), pp. 332-334
9. TURNER, G.W., CHOI, H.K. and LE, H.Q.: 'Growth of InAsSb quantum wells for long-wavelength (∼4μm) lasers', J. Vac. Sci Technol. B., 1995, 13, (2). pp. 699-671